?guangdong hottech industrial co.,ltd e-mail:hkt@h eketai.com 1 / 4 HED2150(npn) general purpose transistor replacement type : 2sd2150 features ? excellent current-to-gain characteristics ? low collector saturation voltage typically v ce(sat) =0.5v(max) for i c /i b =2a/0.1a maximum ratings (t a = 25c unless otherwise noted) electrical characteristics (t a =25c unless otherwise noted ) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c =50a,i e =0 40 v collector-emitter breakdown voltage v ceo i c =1ma,i b =0 20 v emitter-base breakdown voltage v ebo i e =50a,i c =0 6 v collector cut-off current i cbo v cb =30v,i e =0 0.1 ua emitter cut-off current i ebo v eb =5v,i c =0 0.1 ua dc current gain h fe v ce =2v,i c =100ma 180 560 collector-emitter saturation voltage v ce(sat) i c =2a, i b =100ma 0.5 v transition frequency f t v ce =2v,i c =500ma,f=100mhz 290 mhz output capacitance c ob v cb =10v,,i e =0a,f=1mhz 25 pf classification of h fe rank r s range 180-390 270-560 marking cfr cfs parameter symbol value unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 6 v collector current-continuous i c 3 a collector power dissipation p c 500 mw junction temperature t j 150 c storage temperature t stg -55~150 c sot-89 1:base 2:collector 3:emitter
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 2 / 4 HED2150(npn) general purpose transistor typical characteristics 0.1 1 10 10 100 0.1 1 10 100 1000 200 400 600 800 1000 1200 1 10 100 1000 1000 0 200 400 600 800 1000 0.1 1 10 100 1000 10 100 10 100 0.1 1 10 100 1000 1 10 100 1000 012345 0 40 80 120 160 200 0 25 50 75 100 125 150 0 100 200 300 400 500 600 3000 c ob c ib capacitance c (pf) reverse voltage v (v) 500 f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib 20 base-emitter saturation voltage v besat (mv) collector current i c (ma) t a =25 t a =100 3000 i c v besat =20 100 i c h fe t a =100 t a =25 common emitter v ce =2v dc current gain h fe collector current i c (ma) 3000 base-emmiter voltage v be (mv) collcetor current i c (ma) v ce =2v t a =100 t a =25 i c i c 2 500 v be f t v ce =2v t a =25 transition frequency f t (mhz) collector current i c (ma) 0.3 i c v cesat collector current i c (ma) collector-emitter saturation voltage v cesat (mv) t a =25 t a =100 3000 =20 500ua 450ua common emitter t a =25 400ua 350ua 300ua 250ua 200ua 150ua 100ua i b =50ua static characteristic collector current i c (ma) collector-emitter voltage v ce (v) ambient temperature t a ( ) collector power dissipation p c (mw) p c t a
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 3 / 4 HED2150(npn) general purpose transistor sot-89 package outline dimensions symbol d i m e n s i on s i n m i l l i m e t e r s d i m e n s i o n s i n i n c h e s min. max. min. max. a 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 d 4.400 4.600 0.173 0.181 d1 1.550ref. 0.061ref. e 2.300 2.600 0.091 0.102 e1 3.940 4.250 0.155 0.167 e 1.500typ. 0.060typ. e1 3.000typ. 0.118typ. l 0.900 1.200 0.035 0.047
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 4 / 4 HED2150(npn) general purpose transistor sot-89 tape and reel dimensionsareinmillimeter type a b c d e f p0 p p1 w sot-89 4.85 4.45 1.85 ? 1.50 1.75 5.50 4.00 8.00 2.00 12.00 tolerance 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 sot-89 tape leader and trailer sot-89 reel dimnsionsareinmillimetere reeloption d d1 d2 g h i w1 w2 7 dia ? 180 60.00 r32.00 r86.50 r30.00 ? 13.00 13.20 16.50 tolerance 2 1 1 1 1 1 1 1 empty pockets empty pockets leader tape components
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